? semiconductor components industries, llc, 2006 august, 2006 ? rev. 3 1 publication order number: MGSF1N02ELT1/d MGSF1N02ELT1 preferred device power mosfet 750 mamps, 20 volts n ? channel sot ? 23 these miniature surface mount mosfets low r ds(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. typical applications are dc ? dc converters and power management in portable and battery ? powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life ? miniature sot ? 23 surface mount package saves board space ? pb ? free package is available maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain ? to ? source voltage v dss 20 vdc gate ? to ? source voltage ? continuous v gs 8.0 vdc drain current ? continuous @ t a = 25 c ? pulsed drain current (t p 10 s) i d i dm 750 2000 ma total power dissipation @ t a = 25 c p d 400 mw operating and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ? junction ? to ? ambient r ja 300 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 3 1 2 n ? channel 750 mamps, 20 volts r ds(on) = 85 m preferred devices are recommended choices for future use and best overall value. ne = specific device code m = date code* = pb ? free package *date code orientation and/or overbar may vary depending upon manufacturing location. http://onsemi.com (note: microdot may be in either location) sot ? 23 case 318 style 21 marking diagram/ pin assignment 3 1 drain 1 gate 2 source ne m device package shipping ? ordering information MGSF1N02ELT1 sot ? 23 3000/tape & reel MGSF1N02ELT1g sot ? 23 pb ? free 3000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d.
MGSF1N02ELT1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (v gs = 0 vdc, i d = 10 a) v (br)dss 20 ? ? vdc zero gate voltage drain current (v ds = 20 vdc, v gs = 0 vdc) (v ds = 20 vdc, v gs = 0 vdc, t j = 125 c) i dss ? ? ? ? 1.0 10 adc gate ? source leakage current (v gs = 8.0 vdc, v ds = 0 vdc) i gss ? ? 0.1 adc on characteristics (note 1) gate ? source threshold voltage (v ds = v gs , i d = 250 adc) v gs(th) 0.5 ? 1.0 vdc static drain ? to ? source on ? resistance (v gs = 4.5 vdc, i d = 1.0 a) (v gs = 2.5 vdc, i d = 0.75 a) r ds(on) ? ? ? ? 0.085 0.115 dynamic characteristics input capacitance (v ds = 5.0 vdc, v gs = 0 v, f = 1.0 mhz) c iss ? 160 ? pf output capacitance (v ds = 5.0 vdc, v gs = 0 v, f = 1.0 mhz) c oss ? 130 ? transfer capacitance (v dg = 5.0 vdc, v gs = 0 v, f = 1.0 mhz) c rss ? 60 ? switching characteristics (note 2) turn ? on delay time (v dd = 5 vdc, i d = 1.0 adc, r l = 5 , r g = 6 ) t d(on) ? 6.0 ? ns rise time t r ? 26 ? turn ? off delay time t d(off) ? 117 ? fall time t f ? 105 ? total gate charge (v ds = 16 vdc, i d = 1.2 adc, v gs = 4.0 vdc) q t ? 6500 ? pc source ? drain diode characteristics continuous current i s ? ? 0.6 a pulsed current i sm ? ? 0.75 ? forward voltage (note 2) (v gs = 0 vdc, i s = 0.6 adc) v sd ? ? 1.2 v 1. pulse test: pulse width 300 s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperature. typical electrical characteristics 0 1.5 0.5 2.5 1 figure 1. transfer characteristics 0.5 1.4 1.7 i d , drain current (amps) v gs , gate?to?source voltage (volts) figure 2. on ? region characteristics t j = 150 c ?55 c 0 0.5 1 2.5 0 1 1.2 v ds , drain?to?source voltage (volts) i d , drain current (amps) 1.5 0.2 2 2 0.6 2.0 1.4 0.8 1.1 2 25 c 0.4 0.8 1.6 1.8 v gs = 1.25 v 1.5 v 1.75 v 2.0 v 2.25 v 2.5 v
MGSF1N02ELT1 http://onsemi.com 3 typical electrical characteristics r ds(on) , drain?to?source resistance (normalized) r ds(on) , drain?to?source resistance (ohms ) figure 3. on ? resistance versus drain current 0 0.4 0.8 1.2 1.6 0.06 0.12 0.16 figure 4. on ? resistance versus drain current i d , drain current (amps) figure 5. on ? resistance variation over temperature 0.6 1 0.001 0.1 1 t j , junction temperature ( c) figure 6. gate charge v sd , diode forward voltage (volts) figure 7. body diode forward voltage i d , diode current (amps) v gs = 4.5 v i d = 1.2 a ?50 0 50 100 150 0.1 0.7 0.8 0.9 0 0.1 0.2 0.3 0.9 0.08 0.01 0.4 figure 8. capacitance variation r ds(on) , drain?to?source resistance (ohms ) 0 0.4 0.8 1.2 1.6 0 0.1 0.14 i d , drain current (amps) 0.08 0.04 v gs , gate?to?source voltage (volts) 0 4 2 0 q t , total gate charge (pc) 5 3 6000 v ds = 16 v t j = 25 c 2000 i d = 1.2 a v ds , drain?to?source voltage (volts) c, capacitance (pf) 047 12 6 c iss c oss c rss 500 200 f = 1 mhz t j = 25 c 0 0.2 0.6 1 1.4 0.12 0.06 0.02 0.2 0.6 1 1.4 1.1 1.6 1.2 1.3 1.5 4000 0.5 0.6 0.7 0.8 0.04 0.02 0 0.2 1.8 2 ?25 25 75 125 8000 10000 250 50 300 100 350 150 5 3 0.14 0.18 t j = 150 c 25 c v gs = 2.5 v ?55 c 2 1.8 t j = 150 c 25 c v gs = 4.5 v ?55 c 1.4 v gs = 2.5 v i d = 1.0 a 1 10 9 8 400 450 t j = 150 c 25 c ?55 c
MGSF1N02ELT1 http://onsemi.com 4 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue an d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318 ? 01 thru ? 07 and ? 09 obsolete, new standard 318 ? 08. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h style 21: pin 1. gate 2. source 3. drain 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 MGSF1N02ELT1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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